Simulation, Generation, and Characterization of High Brightness Electron Source at 1 Gv/m Gradient

نویسندگان

  • T. Srinivasan-Rao
  • J. Schill
  • I. Ben-Zvi
  • K. Batchelor
  • J. P. Farrell
  • X. E. Lin
  • A. Odian
چکیده

This paper describes computer simulations and measurements on an electron bunch from a pulsed, high gradient gap. MAFIA and PBGUNS were used to calculate the emittance, brightness and energy spread of the electron beam for peak currents ranging from 10 A to 1 kA and pulse durations ranging from 0.3 ps to 10 ps. Under optimum conditions, normalized emittance of 10 pi m-rad, beam brightness of 3x10 A/(m-rad) and energy spread of 0.15 % were obtained. A pulsed high voltage with 1 MV amplitude, and ~ 1 ns duration was applied to the diode with an interelectrode gap ranging from 2 mm to 0.5 mm. Copper cathodes with three different surface preparations, diamond polished, diamond cut and chemically cleaned, have been tested for their voltage hold-off properties under this high gradient and the Fowler-Nordheim plots were generated. The diamond polished OFC class II copper was shown to consistently produce lower dark current and higher holdoff voltage. Photoemission studies have been made using light from a KrF excimer. The field enhancement factor for photoemission was calculated to be 5, an order of magnitude smaller than the dark current beta for a similar surface.

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تاریخ انتشار 1999